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| 150W, 50V, 175MHz N-CHANNEL RF POWER VERTICAL MOSFET PRELIMINARY INFORMATION VRF151 BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features * * * * * * * 150W WITH 14dB TYPICAL GAIN @ 175MHz, 50V 150W WITH 22dB TYPICAL GAIN @ 30MHz, 50V EXCELLENT STABILITY & LOW IMD COMMON SOURCE CONFIGURATION 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS NITRIDE PASSIVATED REFRACTORY GOLD METALLIZATION DESCRIPTION: The VRF151 is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and intermodulation distortion. 1. DRAIN 2. SOURCE 3. GATE 4. SOURCE ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol V(BR)DSS VDGO VGS ID PDISS TJ T STG Parameter Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Total Device Power Dissipation Max Operating Junction Temperature Storage Temperature Value 125 125 40 16 300 +200 -65 to +150 Unit V V V A W C C Thermal Data Re(J-C) Thermal Resistance Junction-Case 0.6 C/W VRF151.PDF 03-23-04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PRELIMINARY INFORMATION VRF151 STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25 C) 25 Symbol Off Characteristics: V(BR)DSS VGS = 0V IDSS VGS = 0V IGSS VGS = 20V On Characteristics: VGS(Q) VDS = 10V VDS(ON) VGS = 10V GFS VDS = 10V Dynamic Characteristics: CISS VGS = 0V COSS VGS = 0V CRSS VGS = 0V Test Conditions IDS = 100mA VDS = 50V VDS = 0V ID = 250mA ID = 10A ID = 250mA VDS = 50V VDS = 50V VDS = 50V f = 1 MHz f = 1 MHz f = 1 MHz Min. 125 ----1.0 1.0 5.0 ------- Value Typ. ------3.0 2.0 --400 235 18 Max. --5.0 1.0 5.0 5.0 --------- Unit V mA A V V mho pF pF pF FUNCTIONAL TESTS Symbol POUT GPS GPS D IMD(d3) Load Mismatch Test Conditions f = 175MHz VDD = 50V IDQ = 250mA f = 175MHz VDD = 50V POUT = 150WPEP IDQ = 250mA f = 30MHz f = 175MHz f1 = 30MHz VDD = 50V f = 30MHz VDD = 50V POUT = 150WPEP IDQ = 250mA VDD = 50V POUT = 150WPEP IDQ = 250mA f2=30.001MHz POUT = 150WPEP IDQ = 250mA VDD = 50V POUT = 150WPEP VDQ = 250mA 30:1 VSWR - All Phase Angles Min. 150 --18 ----- Value Typ. 14 22 55 -32 Max. ----------- Unit W dB dB % dBc No degradation in Output Power VRF151.PDF 03-23-04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PRELIMINARY INFORMATION VRF151 TEST CIRCUIT INFORMATION 151 VRF151.PDF 03-23-04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PRELIMINARY INFORMATION VRF151 Power Out vs. Power In Freq = 175 MHz, Vdd = 50V, IDQ = 250mA 160.00 140.00 120.00 100.00 Power Out (W) 80.00 60.00 40.00 20.00 0.00 0.00 1.00 2.00 3.00 Power In (W) 4.00 5.00 6.00 Gain & Efficiency vs. Power Out Freq = 175 MHz, Vdd = 50V, IDQ = 250mA 16.0 60.0% 15.5 Gain 15.0 50.0% 40.0% 14.5 Efficiency (%) Gain (dB) 14.0 30.0% Efficiency 13.5 20.0% 13.0 10.0% 12.5 12.0 0.00 20.00 40.00 60.00 80.00 Power Out (W) 100.00 120.00 140.00 0.0% 160.00 VRF151.PDF 03-23-04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PRELIMINARY INFORMATION VRF151 PACKAGE MECHANICAL DATA VRF151.PDF 03-23-04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. |
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